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Effect of gallium doping and ball milling process on the thermoelectric performance of n-type ZnO

Journal Article


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Abstract


  • We report a systematic investigation of the thermoelectric properties of n-type Ga-doped ZnO synthesized using different ball milling conditions. Samples fabricated by the high-energy ball milling resulted in a highly dense layered structure with randomly distributed voids. These samples measured the lowest room temperature thermal conductivity, i.e., 27 W/mK due to increased phonon scattering. Furthermore, the Ga:ZnO system showed a metal-semiconductor transition above 300 K with transition temperature decreasing with increasing doping level. Measurement of the activation energy revealed the presence of one donor level around 3.9-7.8 meV and a deeper donor level around 15.4-18.1 meV below the conduction band for the Ga-doped samples. For Ga-doped ZnO, Seebeck coefficient of-185 μV/K (at 1000 K) was achieved, which is ∼30-45% higher than the values previously reported for Zn:Ga system. Jonker plot analysis was used to analyze the scope of Ga:ZnO bulk system. © 2012 Materials Research Society.

Publication Date


  • 2012

Citation


  • Jood, P., Peleckis, G., Wang, X. & Dou, S. Xue. (2012). Effect of gallium doping and ball milling process on the thermoelectric performance of n-type ZnO. Journal of Materials Research, 27 (17), 2278-2285.

Scopus Eid


  • 2-s2.0-84865526800

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=1002&context=eispapers

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/3

Has Global Citation Frequency


Number Of Pages


  • 7

Start Page


  • 2278

End Page


  • 2285

Volume


  • 27

Issue


  • 17

Place Of Publication


  • United States

Abstract


  • We report a systematic investigation of the thermoelectric properties of n-type Ga-doped ZnO synthesized using different ball milling conditions. Samples fabricated by the high-energy ball milling resulted in a highly dense layered structure with randomly distributed voids. These samples measured the lowest room temperature thermal conductivity, i.e., 27 W/mK due to increased phonon scattering. Furthermore, the Ga:ZnO system showed a metal-semiconductor transition above 300 K with transition temperature decreasing with increasing doping level. Measurement of the activation energy revealed the presence of one donor level around 3.9-7.8 meV and a deeper donor level around 15.4-18.1 meV below the conduction band for the Ga-doped samples. For Ga-doped ZnO, Seebeck coefficient of-185 μV/K (at 1000 K) was achieved, which is ∼30-45% higher than the values previously reported for Zn:Ga system. Jonker plot analysis was used to analyze the scope of Ga:ZnO bulk system. © 2012 Materials Research Society.

Publication Date


  • 2012

Citation


  • Jood, P., Peleckis, G., Wang, X. & Dou, S. Xue. (2012). Effect of gallium doping and ball milling process on the thermoelectric performance of n-type ZnO. Journal of Materials Research, 27 (17), 2278-2285.

Scopus Eid


  • 2-s2.0-84865526800

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=1002&context=eispapers

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/3

Has Global Citation Frequency


Number Of Pages


  • 7

Start Page


  • 2278

End Page


  • 2285

Volume


  • 27

Issue


  • 17

Place Of Publication


  • United States