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Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector

Journal Article


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Abstract


  • In our previous work [Sun et al., Appl. Phys. Lett. 100, 013506 (2012)], we inferred the existence

    of localized self-mixing in an antenna-coupled field-effect terahertz detector. In this Letter, we

    report a quasistatic self-mixing model taking into account the localized terahertz fields and its

    verification by comparing the simulated results with the experimental data in a two-dimensional

    space of the gate voltage and the drain/source bias. The model well describes the detector

    characteristics: not only the magnitude, but also the polarity, of the photocurrent can be tuned. The

    existence of strongly localized self-mixing in such detectors is confirmed.

Authors


  •   Sun, J D. (external author)
  •   Qin, Hongyu (external author)
  •   Lewis, R A.
  •   Sun, Y F. (external author)
  •   Zhang, X Y. (external author)
  •   Cai, Y (external author)
  •   Wu, D M. (external author)
  •   Zhang, B S. (external author)

Publication Date


  • 2012

Citation


  • Sun, J. D., Qin, H., Lewis, R. A., Sun, Y. F., Zhang, X. Y., Cai, Y., Wu, D. M. & Zhang, B. S. (2012). Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector. Applied Physics Letters, 100 (17), 173513-1-173513-4.

Scopus Eid


  • 2-s2.0-84860325030

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=7348&context=engpapers&unstamped=1

Ro Metadata Url


  • http://ro.uow.edu.au/engpapers/4416

Start Page


  • 173513-1

End Page


  • 173513-4

Volume


  • 100

Issue


  • 17

Place Of Publication


  • http://dx.doi.org/10.1063/1.4705306

Abstract


  • In our previous work [Sun et al., Appl. Phys. Lett. 100, 013506 (2012)], we inferred the existence

    of localized self-mixing in an antenna-coupled field-effect terahertz detector. In this Letter, we

    report a quasistatic self-mixing model taking into account the localized terahertz fields and its

    verification by comparing the simulated results with the experimental data in a two-dimensional

    space of the gate voltage and the drain/source bias. The model well describes the detector

    characteristics: not only the magnitude, but also the polarity, of the photocurrent can be tuned. The

    existence of strongly localized self-mixing in such detectors is confirmed.

Authors


  •   Sun, J D. (external author)
  •   Qin, Hongyu (external author)
  •   Lewis, R A.
  •   Sun, Y F. (external author)
  •   Zhang, X Y. (external author)
  •   Cai, Y (external author)
  •   Wu, D M. (external author)
  •   Zhang, B S. (external author)

Publication Date


  • 2012

Citation


  • Sun, J. D., Qin, H., Lewis, R. A., Sun, Y. F., Zhang, X. Y., Cai, Y., Wu, D. M. & Zhang, B. S. (2012). Probing and modelling the localized self-mixing in a GaN/AlGaN field-effect terahertz detector. Applied Physics Letters, 100 (17), 173513-1-173513-4.

Scopus Eid


  • 2-s2.0-84860325030

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=7348&context=engpapers&unstamped=1

Ro Metadata Url


  • http://ro.uow.edu.au/engpapers/4416

Start Page


  • 173513-1

End Page


  • 173513-4

Volume


  • 100

Issue


  • 17

Place Of Publication


  • http://dx.doi.org/10.1063/1.4705306