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Large electrocaloric effect of highly (100)-oriented 0.68PbMg1/3Nb2/3O3-0.32PbTiO3 thin films with a Pb(Zr0.3Ti0.7)O3/PbOx buffer layer

Journal Article


Abstract


  • 0.68PbMg1/3Nb2/3O3–0.32PbTiO3 (PMN–PT) thin films with a lead zirconate titanate Pb(Zr0.3Ti0.7)O3 (PZT)/

    PbOx buffer layer were deposited on Pt/TiO2/SiO2/Si substrates by radio frequency magnetron sputtering

    technique, and pure perovskite crystalline phase with highly (100)-preferred orientation was formed in the

    ferroelectric films. We found that the highly (100)-oriented thin films possess not only excellent dielectric

    and ferroelectric properties but also a large electrocaloric effect (13.4 K at 15 V, i.e., 0.89 K/V) which is

    attributed to the large electric field-induced polarization and entropy change during the ferroelectric–

    paraelectric phase transition. The experimental results indicate that the use of PZT/PbOx buffer layer can

    induce the crystal orientation and phase purity of the PMN–PT thin films, and consequently enhance their

    electrical properties.

Publication Date


  • 2011

Citation


  • Feng, Z., Shi, D., Zeng, R. & Dou, S. Xue. (2011). Large electrocaloric effect of highly (100)-oriented 0.68PbMg1/3Nb2/3O3-0.32PbTiO3 thin films with a Pb(Zr0.3Ti0.7)O3/PbOx buffer layer. Thin Solid Films, 519 (16), 5433-5436.

Scopus Eid


  • 2-s2.0-79957998381

Ro Metadata Url


  • http://ro.uow.edu.au/engpapers/3150

Number Of Pages


  • 3

Start Page


  • 5433

End Page


  • 5436

Volume


  • 519

Issue


  • 16

Abstract


  • 0.68PbMg1/3Nb2/3O3–0.32PbTiO3 (PMN–PT) thin films with a lead zirconate titanate Pb(Zr0.3Ti0.7)O3 (PZT)/

    PbOx buffer layer were deposited on Pt/TiO2/SiO2/Si substrates by radio frequency magnetron sputtering

    technique, and pure perovskite crystalline phase with highly (100)-preferred orientation was formed in the

    ferroelectric films. We found that the highly (100)-oriented thin films possess not only excellent dielectric

    and ferroelectric properties but also a large electrocaloric effect (13.4 K at 15 V, i.e., 0.89 K/V) which is

    attributed to the large electric field-induced polarization and entropy change during the ferroelectric–

    paraelectric phase transition. The experimental results indicate that the use of PZT/PbOx buffer layer can

    induce the crystal orientation and phase purity of the PMN–PT thin films, and consequently enhance their

    electrical properties.

Publication Date


  • 2011

Citation


  • Feng, Z., Shi, D., Zeng, R. & Dou, S. Xue. (2011). Large electrocaloric effect of highly (100)-oriented 0.68PbMg1/3Nb2/3O3-0.32PbTiO3 thin films with a Pb(Zr0.3Ti0.7)O3/PbOx buffer layer. Thin Solid Films, 519 (16), 5433-5436.

Scopus Eid


  • 2-s2.0-79957998381

Ro Metadata Url


  • http://ro.uow.edu.au/engpapers/3150

Number Of Pages


  • 3

Start Page


  • 5433

End Page


  • 5436

Volume


  • 519

Issue


  • 16