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Energy states of phosphorous donor in silicon in fields up to 18 T

Journal Article


Abstract


  • The evolution of the energy states of the phosphorous donor in silicon

    with magnetic field has been the subject of previous experimental and theoretical

    studies to fields of 10 T. We now present experimental optical absorption data to

    18 T in combination with theoretical data to the same field. We observe features

    that are not revealed in the earlier work, including additional interactions and anticrossings

    between the different final states. For example, according to the theory, for

    the “1s →2p+” transition, there are anti-crossings at about 5, 10, 14, 16, and 18 T.

    In the experiments, we resolve at least the 5, 10, and 14 T anti-crossings, and our data

    at 16 and 18 T are consistent with the calculations.

Publication Date


  • 2010

Citation


  • Bruno-Alfonso, A., Lewis, R. A., Hai, G. & Vickers, R. EM. (2010). Energy states of phosphorous donor in silicon in fields up to 18 T. Journal of Low Temperature Physics, 159 (1-2), 226-229.

Scopus Eid


  • 2-s2.0-77950370474

Ro Metadata Url


  • http://ro.uow.edu.au/engpapers/3000

Number Of Pages


  • 3

Start Page


  • 226

End Page


  • 229

Volume


  • 159

Issue


  • 1-2

Abstract


  • The evolution of the energy states of the phosphorous donor in silicon

    with magnetic field has been the subject of previous experimental and theoretical

    studies to fields of 10 T. We now present experimental optical absorption data to

    18 T in combination with theoretical data to the same field. We observe features

    that are not revealed in the earlier work, including additional interactions and anticrossings

    between the different final states. For example, according to the theory, for

    the “1s →2p+” transition, there are anti-crossings at about 5, 10, 14, 16, and 18 T.

    In the experiments, we resolve at least the 5, 10, and 14 T anti-crossings, and our data

    at 16 and 18 T are consistent with the calculations.

Publication Date


  • 2010

Citation


  • Bruno-Alfonso, A., Lewis, R. A., Hai, G. & Vickers, R. EM. (2010). Energy states of phosphorous donor in silicon in fields up to 18 T. Journal of Low Temperature Physics, 159 (1-2), 226-229.

Scopus Eid


  • 2-s2.0-77950370474

Ro Metadata Url


  • http://ro.uow.edu.au/engpapers/3000

Number Of Pages


  • 3

Start Page


  • 226

End Page


  • 229

Volume


  • 159

Issue


  • 1-2