Energy states of phosphorous donor in silicon in fields up to 18 T

The evolution of the energy states of the phosphorous donor in silicon

with magnetic field has been the subject of previous experimental and theoretical

studies to fields of 10 T. We now present experimental optical absorption data to

18 T in combination with theoretical data to the same field. We observe features

that are not revealed in the earlier work, including additional interactions and anticrossings

between the different final states. For example, according to the theory, for

the “1s →2p+” transition, there are anti-crossings at about 5, 10, 14, 16, and 18 T.

In the experiments, we resolve at least the 5, 10, and 14 T anti-crossings, and our data

at 16 and 18 T are consistent with the calculations.