Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems

We demonstrate theoretically that the many-body effect such as exchange interaction can cause the

hybridization of the electron and hole dispersion relations in InAs/GaSb based type II and broken-gap

quantum well (QW) systems. As a result, a terahertz mini-gap at the anti-crossing points of the

conduction and valence bands can be induced by the inter-layer electron-hole coupling via the Coulomb

interaction. It is shown that the many-body effect is another important source of the hybridization of

the dispersion relations in InAs/GaSb QW systems.