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Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems

Journal Article


Abstract


  • We demonstrate theoretically that the many-body effect such as exchange interaction can cause the

    hybridization of the electron and hole dispersion relations in InAs/GaSb based type II and broken-gap

    quantum well (QW) systems. As a result, a terahertz mini-gap at the anti-crossing points of the

    conduction and valence bands can be induced by the inter-layer electron-hole coupling via the Coulomb

    interaction. It is shown that the many-body effect is another important source of the hybridization of

    the dispersion relations in InAs/GaSb QW systems.

UOW Authors


  •   Xu, Wen (external author)
  •   Zeng, Zhi (external author)
  •   Wright, A R. (external author)
  •   Zhang, C
  •   Zhang, Jian-Min (external author)
  •   Lu, Tao (external author)

Publication Date


  • 2009

Citation


  • Xu, W., Zeng, Z., Wright, A. R., Zhang, C., Zhang, J. & Lu, T. (2009). Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems. Microelectronics Journal, 40 (4-5), 809-811.

Scopus Eid


  • 2-s2.0-63749130104

Ro Metadata Url


  • http://ro.uow.edu.au/engpapers/5446

Number Of Pages


  • 2

Start Page


  • 809

End Page


  • 811

Volume


  • 40

Issue


  • 4-5

Abstract


  • We demonstrate theoretically that the many-body effect such as exchange interaction can cause the

    hybridization of the electron and hole dispersion relations in InAs/GaSb based type II and broken-gap

    quantum well (QW) systems. As a result, a terahertz mini-gap at the anti-crossing points of the

    conduction and valence bands can be induced by the inter-layer electron-hole coupling via the Coulomb

    interaction. It is shown that the many-body effect is another important source of the hybridization of

    the dispersion relations in InAs/GaSb QW systems.

UOW Authors


  •   Xu, Wen (external author)
  •   Zeng, Zhi (external author)
  •   Wright, A R. (external author)
  •   Zhang, C
  •   Zhang, Jian-Min (external author)
  •   Lu, Tao (external author)

Publication Date


  • 2009

Citation


  • Xu, W., Zeng, Z., Wright, A. R., Zhang, C., Zhang, J. & Lu, T. (2009). Exchange-induced band hybridization in InAs/GaSb based type II and broken-gap quantum well systems. Microelectronics Journal, 40 (4-5), 809-811.

Scopus Eid


  • 2-s2.0-63749130104

Ro Metadata Url


  • http://ro.uow.edu.au/engpapers/5446

Number Of Pages


  • 2

Start Page


  • 809

End Page


  • 811

Volume


  • 40

Issue


  • 4-5