Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems

We present a simple theoretical approach to calculate electronic subband structure in InAs/GaSb-based type II and broken-gap

quantum well systems. The theoretical model is developed through solving self-consistently the Schroè dinger equation for the

eigenfunctions and eigenvalues coupled with the Poisson equation for the confinement potentials, in which the effects such as charge

distribution and depletion are considered. In particular, we examine the effect of a GaSb cap layer on electronic properties of the

quantum well systems in conjunction with experiments and experimental findings. The results obtained from the proposed self-consistent

calculation can be used to understand important experimental findings and are in line with those measured experimentally.