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Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems

Journal Article


Abstract


  • We present a simple theoretical approach to calculate electronic subband structure in InAs/GaSb-based type II and broken-gap

    quantum well systems. The theoretical model is developed through solving self-consistently the Schroè dinger equation for the

    eigenfunctions and eigenvalues coupled with the Poisson equation for the confinement potentials, in which the effects such as charge

    distribution and depletion are considered. In particular, we examine the effect of a GaSb cap layer on electronic properties of the

    quantum well systems in conjunction with experiments and experimental findings. The results obtained from the proposed self-consistent

    calculation can be used to understand important experimental findings and are in line with those measured experimentally.

UOW Authors


  •   Xu, Wen (external author)
  •   Folkes, P A. (external author)
  •   Gumbs, G (external author)
  •   Zeng, Zhi (external author)
  •   Zhang, C

Publication Date


  • 2008

Citation


  • Xu, W., Folkes, P. A., Gumbs, G., Zeng, Z. & Zhang, C. (2008). Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems. Physica E: Low-Dimensional Systems and Nanostructures, 40 1536-1538.

Scopus Eid


  • 2-s2.0-39649114319

Ro Metadata Url


  • http://ro.uow.edu.au/engpapers/2829

Number Of Pages


  • 2

Start Page


  • 1536

End Page


  • 1538

Volume


  • 40

Abstract


  • We present a simple theoretical approach to calculate electronic subband structure in InAs/GaSb-based type II and broken-gap

    quantum well systems. The theoretical model is developed through solving self-consistently the Schroè dinger equation for the

    eigenfunctions and eigenvalues coupled with the Poisson equation for the confinement potentials, in which the effects such as charge

    distribution and depletion are considered. In particular, we examine the effect of a GaSb cap layer on electronic properties of the

    quantum well systems in conjunction with experiments and experimental findings. The results obtained from the proposed self-consistent

    calculation can be used to understand important experimental findings and are in line with those measured experimentally.

UOW Authors


  •   Xu, Wen (external author)
  •   Folkes, P A. (external author)
  •   Gumbs, G (external author)
  •   Zeng, Zhi (external author)
  •   Zhang, C

Publication Date


  • 2008

Citation


  • Xu, W., Folkes, P. A., Gumbs, G., Zeng, Z. & Zhang, C. (2008). Electronic subband structure of InAs/GaSb-based type II and broken-gap quantum well systems. Physica E: Low-Dimensional Systems and Nanostructures, 40 1536-1538.

Scopus Eid


  • 2-s2.0-39649114319

Ro Metadata Url


  • http://ro.uow.edu.au/engpapers/2829

Number Of Pages


  • 2

Start Page


  • 1536

End Page


  • 1538

Volume


  • 40