Phonon-limited mobility in two-dimensional semiconductors with spin-orbit

The authors demonstrate that the Rashba spin-orbit interaction in low-dimensional semiconductors

can enhance or reduce the electron-phonon scattering rate by as much as 25%. The underlying

mechanism is that the electron-phonon scattering phase space for the upper (lower) Rashba band is

significantly enhanced (suppressed) by the spin-orbit interaction. While the scattering time

decreases for the upper level, the mobility of the level increases due to an additional term in the

electron velocity.