Abstract
-
We demonstrate theoretically that when an InAs/GaSb based type II and broken-gap quantum well is subjected
to a light field, conductance can be observed along the growth direction due to charge transfer between
electron and hole layers. A sharp peak can be observed in conductance within sub-THz bandwidth. The peak
shifts to the lower frequency (red-shift) with increasing temperature. Our results indicate that InAs/GaSb
based quantum well systems are of potential to be applied as sub-THz photovoltaic devices.