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Cross-over from weak localization to anti-localization in rare doped TRS protected topological insulators

Journal Article


Abstract


  • © 2020 Elsevier B.V. We study magneto-transport phenomena in two rare-earth doped topological insulators, SmxFexSb2-2xTe3 and SmxBi2-xTe2Se single crystals. The magneto-transport behaviours in both compounds exhibit a novel crossover between weak anti-localization (positive magnetoresistance) and weak localization (negative magnetoresistance) with changes in temperatures and magnetic fields. The weak localization is caused by rare-earth-doping induced magnetization, and the weak anti-localization originates from topologically protected surface states. The transition from weak localization to weak anti-localization demonstrates a gap opening at the Dirac point of the surface states in the quantum diffusive regime. This work demonstrates an effective way to manipulate the magneto-transport properties of the topological insulators by rare-earth element doping. Magnetometry measurements indicate that the Sm-dopant alone is paramagnetic, whereas the co-doped Fe-Sm state has short-range antiferromagnetic order. Our results demonstrate the potential to realize exotic topological effects and magneto-electric effects in gapped surface states of rare earth doped topological insulators.

UOW Authors


  •   Yue, Zengji
  •   Zhao, Weiyao (external author)
  •   Rule, Kirrily C. (external author)
  •   Bake, Abuduliken (external author)
  •   Sang, Lina (external author)
  •   Yang, Guangsai (external author)
  •   Tan, Cheng (external author)
  •   Li, Zhi
  •   Wang, Lan (external author)
  •   Wang, Xiaolin

Publication Date


  • 2021

Citation


  • Yue, Z., Zhao, W., Rule, K., Bake, A., Sang, L., Yang, G., Tan, C., Li, Z., Wang, L. & Wang, X. (2021). Cross-over from weak localization to anti-localization in rare doped TRS protected topological insulators. Physics Letters, Section A: General, Atomic and Solid State Physics, 385

Scopus Eid


  • 2-s2.0-85092937864

Volume


  • 385

Place Of Publication


  • Netherlands

Abstract


  • © 2020 Elsevier B.V. We study magneto-transport phenomena in two rare-earth doped topological insulators, SmxFexSb2-2xTe3 and SmxBi2-xTe2Se single crystals. The magneto-transport behaviours in both compounds exhibit a novel crossover between weak anti-localization (positive magnetoresistance) and weak localization (negative magnetoresistance) with changes in temperatures and magnetic fields. The weak localization is caused by rare-earth-doping induced magnetization, and the weak anti-localization originates from topologically protected surface states. The transition from weak localization to weak anti-localization demonstrates a gap opening at the Dirac point of the surface states in the quantum diffusive regime. This work demonstrates an effective way to manipulate the magneto-transport properties of the topological insulators by rare-earth element doping. Magnetometry measurements indicate that the Sm-dopant alone is paramagnetic, whereas the co-doped Fe-Sm state has short-range antiferromagnetic order. Our results demonstrate the potential to realize exotic topological effects and magneto-electric effects in gapped surface states of rare earth doped topological insulators.

UOW Authors


  •   Yue, Zengji
  •   Zhao, Weiyao (external author)
  •   Rule, Kirrily C. (external author)
  •   Bake, Abuduliken (external author)
  •   Sang, Lina (external author)
  •   Yang, Guangsai (external author)
  •   Tan, Cheng (external author)
  •   Li, Zhi
  •   Wang, Lan (external author)
  •   Wang, Xiaolin

Publication Date


  • 2021

Citation


  • Yue, Z., Zhao, W., Rule, K., Bake, A., Sang, L., Yang, G., Tan, C., Li, Z., Wang, L. & Wang, X. (2021). Cross-over from weak localization to anti-localization in rare doped TRS protected topological insulators. Physics Letters, Section A: General, Atomic and Solid State Physics, 385

Scopus Eid


  • 2-s2.0-85092937864

Volume


  • 385

Place Of Publication


  • Netherlands