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Epitaxial growth of metal-semiconductor van der Waals heterostructures NbS2/MoS2 with enhanced performance of transistors and photodetectors

Journal Article


Abstract


  • © 2020, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature. Two-dimensional (2D) heterostructures based on layered transition metal dichalcogenides (TMDs) have attracted increasing attention for the applications of the next-generation high-performance integrated electronics and optoelectronics. Although various TMD heterostructures have been successfully fabricated, epitaxial growth of such atomically thin metal-semiconductor heterostructures with a clean and sharp interface is still challenging. In addition, photodetectors based on such heterostructures have seldom been studied. Here, we report the synthesis of high-quality vertical NbS2/MoS2 metallic-semiconductor heterostructures. By using NbS2 as the contact electrodes, the field-effect mobility and current on-off ratio of MoS2 can be improved at least 6-fold and two orders of magnitude compared with the conventional Ti/Au contact, respectively. By using NbS2 as contact, the photodetector performance of MoS2 is much improved with higher responsivity and less response time. Such facile synthesis of atomically thin metal-semiconductor heterostructures by a simple chemical vapor deposition strategy and its effectiveness as ultrathin 2D metal contact open the door for the future application of electronics and optoelectronics.

UOW Authors


  •   Zhang, Peng (external author)
  •   Bian, Ce (external author)
  •   Ye, Jiafu (external author)
  •   Cheng, Ningyan (external author)
  •   Wang, Xingguo (external author)
  •   Jiang, Huaning (external author)
  •   Wei, Yi (external author)
  •   Zhang, Yiwei (external author)
  •   Du, Yi
  •   Bao, Lihong (external author)
  •   Hu, Weida (external author)
  •   Gong, Yongji (external author)

Publication Date


  • 2020

Citation


  • Zhang, P., Bian, C., Ye, J., Cheng, N., Wang, X., Jiang, H., Wei, Y., Zhang, Y., Du, Y., Bao, L., Hu, W. & Gong, Y. (2020). Epitaxial growth of metal-semiconductor van der Waals heterostructures NbS2/MoS2 with enhanced performance of transistors and photodetectors. Science China Materials,

Scopus Eid


  • 2-s2.0-85087458180

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/4222

Has Global Citation Frequency


Place Of Publication


  • China

Abstract


  • © 2020, Science China Press and Springer-Verlag GmbH Germany, part of Springer Nature. Two-dimensional (2D) heterostructures based on layered transition metal dichalcogenides (TMDs) have attracted increasing attention for the applications of the next-generation high-performance integrated electronics and optoelectronics. Although various TMD heterostructures have been successfully fabricated, epitaxial growth of such atomically thin metal-semiconductor heterostructures with a clean and sharp interface is still challenging. In addition, photodetectors based on such heterostructures have seldom been studied. Here, we report the synthesis of high-quality vertical NbS2/MoS2 metallic-semiconductor heterostructures. By using NbS2 as the contact electrodes, the field-effect mobility and current on-off ratio of MoS2 can be improved at least 6-fold and two orders of magnitude compared with the conventional Ti/Au contact, respectively. By using NbS2 as contact, the photodetector performance of MoS2 is much improved with higher responsivity and less response time. Such facile synthesis of atomically thin metal-semiconductor heterostructures by a simple chemical vapor deposition strategy and its effectiveness as ultrathin 2D metal contact open the door for the future application of electronics and optoelectronics.

UOW Authors


  •   Zhang, Peng (external author)
  •   Bian, Ce (external author)
  •   Ye, Jiafu (external author)
  •   Cheng, Ningyan (external author)
  •   Wang, Xingguo (external author)
  •   Jiang, Huaning (external author)
  •   Wei, Yi (external author)
  •   Zhang, Yiwei (external author)
  •   Du, Yi
  •   Bao, Lihong (external author)
  •   Hu, Weida (external author)
  •   Gong, Yongji (external author)

Publication Date


  • 2020

Citation


  • Zhang, P., Bian, C., Ye, J., Cheng, N., Wang, X., Jiang, H., Wei, Y., Zhang, Y., Du, Y., Bao, L., Hu, W. & Gong, Y. (2020). Epitaxial growth of metal-semiconductor van der Waals heterostructures NbS2/MoS2 with enhanced performance of transistors and photodetectors. Science China Materials,

Scopus Eid


  • 2-s2.0-85087458180

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/4222

Has Global Citation Frequency


Place Of Publication


  • China