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Nodal ring spin gapless semiconductor: New member of spintronic materials

Journal Article


Abstract


  • Both spin gapless semiconductors (SGSs) and nodal ring states (NRSs) have aroused great scientific interest in recent years due to their unique electronic properties and high application potential. However, since their advent, all SGSs and NRSs have been predicted in independent materials. In this work, we proposed a novel type of material, nodal ring spin gapless semiconductor (NRSGS), which combines both states of the SGSs and NRSs. The synthesized material Mg2VO4 is selected as a potential candidate. Detailed band structure analysis reveals that there are gapless crossings in the spin-up direction, which are from multiple topological nodal rings located exactly at the Fermi energy level. Mg2VO4 combines the advantages inherited from both NRSs and SGSs in terms of the innumerable gapless points along multiple nodal rings with all linear dispersions and direct contacts. In addition, Mg2VO4 also shows strong robustness against both the spin orbit coupling effect and strain conditions. Therefore, for the first time, we propose the concept of an NRSGS, and the first such material candidate Mg2VO4 can immediately advance corresponding experimental measurements and even facilitate real applications.

Publication Date


  • 2020

Citation


  • Yang, T., Cheng, Z., Wang, X. & Wang, X. (2020). Nodal ring spin gapless semiconductor: New member of spintronic materials. Journal of Advanced Research,

Scopus Eid


  • 2-s2.0-85087219361

Place Of Publication


  • Netherlands

Abstract


  • Both spin gapless semiconductors (SGSs) and nodal ring states (NRSs) have aroused great scientific interest in recent years due to their unique electronic properties and high application potential. However, since their advent, all SGSs and NRSs have been predicted in independent materials. In this work, we proposed a novel type of material, nodal ring spin gapless semiconductor (NRSGS), which combines both states of the SGSs and NRSs. The synthesized material Mg2VO4 is selected as a potential candidate. Detailed band structure analysis reveals that there are gapless crossings in the spin-up direction, which are from multiple topological nodal rings located exactly at the Fermi energy level. Mg2VO4 combines the advantages inherited from both NRSs and SGSs in terms of the innumerable gapless points along multiple nodal rings with all linear dispersions and direct contacts. In addition, Mg2VO4 also shows strong robustness against both the spin orbit coupling effect and strain conditions. Therefore, for the first time, we propose the concept of an NRSGS, and the first such material candidate Mg2VO4 can immediately advance corresponding experimental measurements and even facilitate real applications.

Publication Date


  • 2020

Citation


  • Yang, T., Cheng, Z., Wang, X. & Wang, X. (2020). Nodal ring spin gapless semiconductor: New member of spintronic materials. Journal of Advanced Research,

Scopus Eid


  • 2-s2.0-85087219361

Place Of Publication


  • Netherlands