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Quantum oscillations of robust topological surface states up to 50 K in thick bulk-insulating topological insulator

Journal Article


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Abstract


  • As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly becoming an important environmental issue. Several approaches have been proposed to construct electronic devices with low-energy consumption. Among these, the low-dissipation surface states of topological insulators (TIs) are widely employed. To develop TI-based devices, a key factor is the maximum temperature at which the Dirac surface states dominate the transport behavior. Here, we employ Shubnikov-de Haas oscillations (SdH) as a means to study the surface state survival temperature in a high-quality vanadium doped Bi1.08Sn0.02Sb0.9Te2S single crystal system. The temperature and angle dependence of the SdH show that: (1) crystals with different vanadium (V) doping levels are insulating in the 3–300 K region; (2) the SdH oscillations show two-dimensional behavior, indicating that the oscillations arise from the pure surface states; and (3) at 50 K, the V0.04 single crystals (Vx:Bi1.08-xSn0.02Sb0.9Te2S, where x = 0.04) still show clear sign of SdH oscillations, which demonstrate that the surface dominant transport behavior can survive above 50 K. The robust surface states in our V doped single crystal systems provide an ideal platform to study the Dirac fermions and their interaction with other materials above 50 K.

Publication Date


  • 2019

Citation


  • Zhao, W., Chen, L., Yue, Z., Li, Z., Cortie, D., Fuhrer, M. & Wang, X. (2019). Quantum oscillations of robust topological surface states up to 50 K in thick bulk-insulating topological insulator. npj Quantum Materials, 4 (1), 56-1-56-1.

Scopus Eid


  • 2-s2.0-85074996653

Ro Full-text Url


  • https://ro.uow.edu.au/cgi/viewcontent.cgi?article=4953&context=aiimpapers

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/3898

Start Page


  • 56-1

End Page


  • 56-1

Volume


  • 4

Issue


  • 1

Place Of Publication


  • United Kingdom

Abstract


  • As personal electronic devices increasingly rely on cloud computing for energy-intensive calculations, the power consumption associated with the information revolution is rapidly becoming an important environmental issue. Several approaches have been proposed to construct electronic devices with low-energy consumption. Among these, the low-dissipation surface states of topological insulators (TIs) are widely employed. To develop TI-based devices, a key factor is the maximum temperature at which the Dirac surface states dominate the transport behavior. Here, we employ Shubnikov-de Haas oscillations (SdH) as a means to study the surface state survival temperature in a high-quality vanadium doped Bi1.08Sn0.02Sb0.9Te2S single crystal system. The temperature and angle dependence of the SdH show that: (1) crystals with different vanadium (V) doping levels are insulating in the 3–300 K region; (2) the SdH oscillations show two-dimensional behavior, indicating that the oscillations arise from the pure surface states; and (3) at 50 K, the V0.04 single crystals (Vx:Bi1.08-xSn0.02Sb0.9Te2S, where x = 0.04) still show clear sign of SdH oscillations, which demonstrate that the surface dominant transport behavior can survive above 50 K. The robust surface states in our V doped single crystal systems provide an ideal platform to study the Dirac fermions and their interaction with other materials above 50 K.

Publication Date


  • 2019

Citation


  • Zhao, W., Chen, L., Yue, Z., Li, Z., Cortie, D., Fuhrer, M. & Wang, X. (2019). Quantum oscillations of robust topological surface states up to 50 K in thick bulk-insulating topological insulator. npj Quantum Materials, 4 (1), 56-1-56-1.

Scopus Eid


  • 2-s2.0-85074996653

Ro Full-text Url


  • https://ro.uow.edu.au/cgi/viewcontent.cgi?article=4953&context=aiimpapers

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/3898

Start Page


  • 56-1

End Page


  • 56-1

Volume


  • 4

Issue


  • 1

Place Of Publication


  • United Kingdom