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Bandgap Dependence of Hot Electron Relaxation in Three Dimensional Dirac Semi-Metals

Conference Paper


Abstract


  • Experimental work has shown that a bandgap can be opened in Dirac semi-metals via an elemental doping scheme. Here we demonstrate how a finite bandgap relaxes the selection rule in phonon scattering, enhancing the power of hot carrier relaxation in a Dirac semi-metal.

UOW Authors


  •   Huang, Sunchao (external author)
  •   Zuber, Jack (external author)
  •   Li, Enbang
  •   Zhang, C

Publication Date


  • 2019

Citation


  • Huang, S., Zuber, J., Li, E. & Zhang, C. (2019). Bandgap Dependence of Hot Electron Relaxation in Three Dimensional Dirac Semi-Metals. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz (pp. 1-2). United States: IEEE.

Scopus Eid


  • 2-s2.0-85074716794

Start Page


  • 1

End Page


  • 2

Place Of Publication


  • United States

Abstract


  • Experimental work has shown that a bandgap can be opened in Dirac semi-metals via an elemental doping scheme. Here we demonstrate how a finite bandgap relaxes the selection rule in phonon scattering, enhancing the power of hot carrier relaxation in a Dirac semi-metal.

UOW Authors


  •   Huang, Sunchao (external author)
  •   Zuber, Jack (external author)
  •   Li, Enbang
  •   Zhang, C

Publication Date


  • 2019

Citation


  • Huang, S., Zuber, J., Li, E. & Zhang, C. (2019). Bandgap Dependence of Hot Electron Relaxation in Three Dimensional Dirac Semi-Metals. International Conference on Infrared, Millimeter, and Terahertz Waves, IRMMW-THz (pp. 1-2). United States: IEEE.

Scopus Eid


  • 2-s2.0-85074716794

Start Page


  • 1

End Page


  • 2

Place Of Publication


  • United States