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Topological insulator materials for advanced optoelectronic devices

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Abstract


  • Topological insulators are quantum materials that have an insulating bulk state

    and a topologically protected metallic surface state with spin and momentum

    helical locking and a Dirac-like band structure [1–3]. Two-dimensional (2D)

    topological insulators are associated with gapless edge states, and three-dimensional

    (3D) topological insulators with gapless surface states [4]. A variety of

    compounds have been identified as 2D or 3D topological insulators, including

    HgTe/CdTe, Bi2Se3, Bi2Te3, Sb2Te3, BiTeCl, Bi1.5Sb0.5Te1.8Se1.2, SmB6 and so on

    [5–8]. The topological surface (edge) states in these materials have been mainly

    investigated by first-principle theoretical calculation, electronic transport,

    angle-resolved photoemission spectroscopy (ARPES), and scanning tunneling

    microscopy (STM) [6]. Unique and fascinating electronic properties, such as

    the quantum spin Hall effect, quantum anomalous Hall effect, topological magnetoelectric

    effect, magnetic monopole image, and Majorana fermions, have

    been observed in the topological insulator materials [9, 10]. With these unique

    properties, topological insulator materials have great potential applications in

    spintronics and quantum information processing, as well as magnetoelectric

    devices with higher efficiency and lower energy consumption [11, 12].

Publication Date


  • 2019

Citation


  • Yue, Z., Wang, X. & Gu, M. (2019). Topological insulator materials for advanced optoelectronic devices. In H. Luo (Ed.), Advanced Topological Insulators (pp. 45-70). United States: John Wiley & Sons, Inc. and Scrivener Publishing LLC.

International Standard Book Number (isbn) 13


  • 9781119407294

Ro Full-text Url


  • https://ro.uow.edu.au/cgi/viewcontent.cgi?article=4601&context=aiimpapers

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/3547

Book Title


  • Advanced Topological Insulators

Start Page


  • 45

End Page


  • 70

Place Of Publication


  • United States

Abstract


  • Topological insulators are quantum materials that have an insulating bulk state

    and a topologically protected metallic surface state with spin and momentum

    helical locking and a Dirac-like band structure [1–3]. Two-dimensional (2D)

    topological insulators are associated with gapless edge states, and three-dimensional

    (3D) topological insulators with gapless surface states [4]. A variety of

    compounds have been identified as 2D or 3D topological insulators, including

    HgTe/CdTe, Bi2Se3, Bi2Te3, Sb2Te3, BiTeCl, Bi1.5Sb0.5Te1.8Se1.2, SmB6 and so on

    [5–8]. The topological surface (edge) states in these materials have been mainly

    investigated by first-principle theoretical calculation, electronic transport,

    angle-resolved photoemission spectroscopy (ARPES), and scanning tunneling

    microscopy (STM) [6]. Unique and fascinating electronic properties, such as

    the quantum spin Hall effect, quantum anomalous Hall effect, topological magnetoelectric

    effect, magnetic monopole image, and Majorana fermions, have

    been observed in the topological insulator materials [9, 10]. With these unique

    properties, topological insulator materials have great potential applications in

    spintronics and quantum information processing, as well as magnetoelectric

    devices with higher efficiency and lower energy consumption [11, 12].

Publication Date


  • 2019

Citation


  • Yue, Z., Wang, X. & Gu, M. (2019). Topological insulator materials for advanced optoelectronic devices. In H. Luo (Ed.), Advanced Topological Insulators (pp. 45-70). United States: John Wiley & Sons, Inc. and Scrivener Publishing LLC.

International Standard Book Number (isbn) 13


  • 9781119407294

Ro Full-text Url


  • https://ro.uow.edu.au/cgi/viewcontent.cgi?article=4601&context=aiimpapers

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/3547

Book Title


  • Advanced Topological Insulators

Start Page


  • 45

End Page


  • 70

Place Of Publication


  • United States