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Enhancing the critical current of YBa2Cu3O7 thin films by substrate nanoengineering

Journal Article


Abstract


  • The critical current density, J c, can be increased by introducing defects throughout YBa 2Cu 3O 7 superconducting thin films. We propose a new approach of substrate nanoengineering to produce well-controlled defects. LaAlO 3 substrates have been ion-etched with different 34 nm deep patterns prior to the deposition of the films. An annealing step at 1000 °C after substrate etching has been undertaken to negate the Ar-ion damage to the surface. The J c of the so-prepared samples measured at different temperatures has been compared to thin films deposited on plain substrates at the same time. In general, an increase in J c is observed across all temperatures and fields as a result of both patterning and annealing. In particular, at zero field and 85 K, the largest enhancement of > 40% has been recorded for circle and triangle patterns. This new substrate nanoengineering technique is very promising for flux trapping of superconducting devices, particularly because an increase to critical current ( I c) also occurs. Further optimization of depth, size, and shape of the patterns is expected to produce further improvements to J c.

UOW Authors


  •   Jones, Antony (external author)
  •   Lam, Simon K. H. (external author)
  •   Du, Jia (external author)
  •   Rubanov, Sergey (external author)
  •   Pan, Alexey

Publication Date


  • 2018

Citation


  • Jones, A., Lam, S. K. H., Du, J., Rubanov, S. & Pan, A. V. (2018). Enhancing the critical current of YBa2Cu3O7 thin films by substrate nanoengineering. Journal of Applied Physics, 124 (23), 233905-1-233905-6.

Scopus Eid


  • 2-s2.0-85059687482

Start Page


  • 233905-1

End Page


  • 233905-6

Volume


  • 124

Issue


  • 23

Place Of Publication


  • United States

Abstract


  • The critical current density, J c, can be increased by introducing defects throughout YBa 2Cu 3O 7 superconducting thin films. We propose a new approach of substrate nanoengineering to produce well-controlled defects. LaAlO 3 substrates have been ion-etched with different 34 nm deep patterns prior to the deposition of the films. An annealing step at 1000 °C after substrate etching has been undertaken to negate the Ar-ion damage to the surface. The J c of the so-prepared samples measured at different temperatures has been compared to thin films deposited on plain substrates at the same time. In general, an increase in J c is observed across all temperatures and fields as a result of both patterning and annealing. In particular, at zero field and 85 K, the largest enhancement of > 40% has been recorded for circle and triangle patterns. This new substrate nanoengineering technique is very promising for flux trapping of superconducting devices, particularly because an increase to critical current ( I c) also occurs. Further optimization of depth, size, and shape of the patterns is expected to produce further improvements to J c.

UOW Authors


  •   Jones, Antony (external author)
  •   Lam, Simon K. H. (external author)
  •   Du, Jia (external author)
  •   Rubanov, Sergey (external author)
  •   Pan, Alexey

Publication Date


  • 2018

Citation


  • Jones, A., Lam, S. K. H., Du, J., Rubanov, S. & Pan, A. V. (2018). Enhancing the critical current of YBa2Cu3O7 thin films by substrate nanoengineering. Journal of Applied Physics, 124 (23), 233905-1-233905-6.

Scopus Eid


  • 2-s2.0-85059687482

Start Page


  • 233905-1

End Page


  • 233905-6

Volume


  • 124

Issue


  • 23

Place Of Publication


  • United States