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Thickness-dependent electronic structure in WTe2 thin films

Journal Article


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Abstract


  • We study the electronic structure of WTe2 thin films with different thicknesses. High-quality thin-film samples

    are obtained with carrier mobility up to 5000 cm2 V−1 s−1, which enables us to resolve the four main Fermi

    pockets from Shubnikov–de Haas (SdH) oscillations. Angle-resolved SdH oscillations show that the WTe2 thin

    films cross from three-dimensional to two-dimensional electronic systems at a thickness of ∼ 20 nm. Using the

    field effect, the nature of the Fermi pockets in thin-film WTe2 is identified, and the evolution of SdH oscillation

    frequencies is traced over different sample thicknesses. It is found that the frequencies dramatically decrease at

    a thickness of approximately 12 nm, which indicates the onset of finite-size effects on the band structure. Our

    work pins down two critical length scales of the thickness-dependent electronic structure in WTe2 thin films.

Authors


  •   Xiang, Feixiang (external author)
  •   Srinivasan, Ashwin (external author)
  •   Du, Z (external author)
  •   Klochan, Oleh (external author)
  •   Dou, Shi Xue
  •   Hamilton, Alexander (external author)
  •   Wang, Xiaolin

Publication Date


  • 2018

Citation


  • Xiang, F., Srinivasan, A., Du, Z. Z., Klochan, O., Dou, S., Hamilton, A. R. & Wang, X. (2018). Thickness-dependent electronic structure in WTe2 thin films. Physical Review B: Covering condensed matter and materials physics, 98 (3), 035115-1-035115-10.

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=4242&context=aiimpapers

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/3192

Start Page


  • 035115-1

End Page


  • 035115-10

Volume


  • 98

Issue


  • 3

Place Of Publication


  • United States

Abstract


  • We study the electronic structure of WTe2 thin films with different thicknesses. High-quality thin-film samples

    are obtained with carrier mobility up to 5000 cm2 V−1 s−1, which enables us to resolve the four main Fermi

    pockets from Shubnikov–de Haas (SdH) oscillations. Angle-resolved SdH oscillations show that the WTe2 thin

    films cross from three-dimensional to two-dimensional electronic systems at a thickness of ∼ 20 nm. Using the

    field effect, the nature of the Fermi pockets in thin-film WTe2 is identified, and the evolution of SdH oscillation

    frequencies is traced over different sample thicknesses. It is found that the frequencies dramatically decrease at

    a thickness of approximately 12 nm, which indicates the onset of finite-size effects on the band structure. Our

    work pins down two critical length scales of the thickness-dependent electronic structure in WTe2 thin films.

Authors


  •   Xiang, Feixiang (external author)
  •   Srinivasan, Ashwin (external author)
  •   Du, Z (external author)
  •   Klochan, Oleh (external author)
  •   Dou, Shi Xue
  •   Hamilton, Alexander (external author)
  •   Wang, Xiaolin

Publication Date


  • 2018

Citation


  • Xiang, F., Srinivasan, A., Du, Z. Z., Klochan, O., Dou, S., Hamilton, A. R. & Wang, X. (2018). Thickness-dependent electronic structure in WTe2 thin films. Physical Review B: Covering condensed matter and materials physics, 98 (3), 035115-1-035115-10.

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=4242&context=aiimpapers

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/3192

Start Page


  • 035115-1

End Page


  • 035115-10

Volume


  • 98

Issue


  • 3

Place Of Publication


  • United States