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Nonlinear I–V behavior in colossal permittivity ceramic:(Nb+In)co-doped rutile TiO2

Journal Article


Abstract


  • The new (NbþIn) co-doped TiO2 ceramics recently stimulated considerable attention due to their colossal permittivity (CP) (100,000). In

    this research, the 3 mol% (NbþIn) co-doped TiO2 ceramics were synthesized by an standard solid-state reaction method. Phase structure was

    studied by XRD and Raman, which showed that all samples were in pure rutile phase. The elements distribution was tested by the SEM–EDS,

    indicating that the Nb and In ions were homogeneously distributed in the grain and grain boundary. Dielectric properties and I–V behavior

    analysis demonstrated that the ceramics may compose of semiconducting grains and insulating grain boundaries. The existence of CP and

    nonlinear I–V behavior in sample had been explained by an internal barrier layer capacitance (IBLC) model, which consists of n-type

    semiconductor grains and insulating grain boundaries.

UOW Authors


  •   Li, Jinglei (external author)
  •   Li, Fei (external author)
  •   Xu, Zhuo (external author)
  •   Zhuang, Yongyong (external author)
  •   Zhang, Shujun

Publication Date


  • 2015

Citation


  • Li, J., Li, F., Xu, Z., Zhuang, Y. & Zhang, S. (2015). Nonlinear I–V behavior in colossal permittivity ceramic:(Nb+In)co-doped rutile TiO2. Ceramics International, 41 (S1), S798-S803.

Scopus Eid


  • 2-s2.0-84937525164

Has Global Citation Frequency


Start Page


  • S798

End Page


  • S803

Volume


  • 41

Issue


  • S1

Place Of Publication


  • United Kingdom

Abstract


  • The new (NbþIn) co-doped TiO2 ceramics recently stimulated considerable attention due to their colossal permittivity (CP) (100,000). In

    this research, the 3 mol% (NbþIn) co-doped TiO2 ceramics were synthesized by an standard solid-state reaction method. Phase structure was

    studied by XRD and Raman, which showed that all samples were in pure rutile phase. The elements distribution was tested by the SEM–EDS,

    indicating that the Nb and In ions were homogeneously distributed in the grain and grain boundary. Dielectric properties and I–V behavior

    analysis demonstrated that the ceramics may compose of semiconducting grains and insulating grain boundaries. The existence of CP and

    nonlinear I–V behavior in sample had been explained by an internal barrier layer capacitance (IBLC) model, which consists of n-type

    semiconductor grains and insulating grain boundaries.

UOW Authors


  •   Li, Jinglei (external author)
  •   Li, Fei (external author)
  •   Xu, Zhuo (external author)
  •   Zhuang, Yongyong (external author)
  •   Zhang, Shujun

Publication Date


  • 2015

Citation


  • Li, J., Li, F., Xu, Z., Zhuang, Y. & Zhang, S. (2015). Nonlinear I–V behavior in colossal permittivity ceramic:(Nb+In)co-doped rutile TiO2. Ceramics International, 41 (S1), S798-S803.

Scopus Eid


  • 2-s2.0-84937525164

Has Global Citation Frequency


Start Page


  • S798

End Page


  • S803

Volume


  • 41

Issue


  • S1

Place Of Publication


  • United Kingdom