Abstract
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This paper describes the use of secondary-ion mass spectrometry (SIMS), nuclear magnetic
resonance (NMR) and transmission electron microscopy (TEM) to identify the amorphous silica in
Ti3SiC2 oxidised at 500-1000°C. The formation of an amorphous Si02 layer and its growth in
thickness with temperature was monitored using dynamic SIMS. Results of NMR and TEM verify for
the first time the direct evidence of amorphous silica formation during the oxidation of TbSiC2 at
l000°C.