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Thermodynamics of quasi-2D electron gas at BFO/Si interface probed with THz time-domain spectroscopy

Journal Article


Abstract


  • An interface is constructed based on a bismuth ferrite oxide (BFO) thin film and p-type silicon, and the temperature dependence of the interface properties has been studied systematically using terahertz time-domain spectroscopy. The BFO/Si interface exhibits quasi-two-dimension electron gas (2DEG) transport in the temperature range of 80 to 140 K: the electrons at the interface possess large electron mobility (∼10 6 cm 2 /V s) and long scattering time (∼100 ps). As the temperature is higher than 140 K, an abrupt decrease in THz interface conductivity is observed due to the breakdown of the 2D EG induced by the surface phase transition in the BFO thin film. Our result reveals that the interface formed between BFO and Si provides a special platform for designing and fabricating THz photonic devices.

UOW Authors


  •   Liu, Xiankuan (external author)
  •   Zhang, Jiadong (external author)
  •   Zhang, Zeyu (external author)
  •   Lin, Xian (external author)
  •   Yu, Yang (external author)
  •   Xing, Xiao (external author)
  •   Jin, Zuanming (external author)
  •   Cheng, Zhenxiang
  •   Ma, Guohong (external author)

Publication Date


  • 2017

Citation


  • Liu, X., Zhang, J., Zhang, Z., Lin, X., Yu, Y., Xing, X., Jin, Z., Cheng, Z. & Ma, G. (2017). Thermodynamics of quasi-2D electron gas at BFO/Si interface probed with THz time-domain spectroscopy. Applied Physics Letters, 111 (15), 152906-1-152906-5.

Scopus Eid


  • 2-s2.0-85031689864

Start Page


  • 152906-1

End Page


  • 152906-5

Volume


  • 111

Issue


  • 15

Place Of Publication


  • United States

Abstract


  • An interface is constructed based on a bismuth ferrite oxide (BFO) thin film and p-type silicon, and the temperature dependence of the interface properties has been studied systematically using terahertz time-domain spectroscopy. The BFO/Si interface exhibits quasi-two-dimension electron gas (2DEG) transport in the temperature range of 80 to 140 K: the electrons at the interface possess large electron mobility (∼10 6 cm 2 /V s) and long scattering time (∼100 ps). As the temperature is higher than 140 K, an abrupt decrease in THz interface conductivity is observed due to the breakdown of the 2D EG induced by the surface phase transition in the BFO thin film. Our result reveals that the interface formed between BFO and Si provides a special platform for designing and fabricating THz photonic devices.

UOW Authors


  •   Liu, Xiankuan (external author)
  •   Zhang, Jiadong (external author)
  •   Zhang, Zeyu (external author)
  •   Lin, Xian (external author)
  •   Yu, Yang (external author)
  •   Xing, Xiao (external author)
  •   Jin, Zuanming (external author)
  •   Cheng, Zhenxiang
  •   Ma, Guohong (external author)

Publication Date


  • 2017

Citation


  • Liu, X., Zhang, J., Zhang, Z., Lin, X., Yu, Y., Xing, X., Jin, Z., Cheng, Z. & Ma, G. (2017). Thermodynamics of quasi-2D electron gas at BFO/Si interface probed with THz time-domain spectroscopy. Applied Physics Letters, 111 (15), 152906-1-152906-5.

Scopus Eid


  • 2-s2.0-85031689864

Start Page


  • 152906-1

End Page


  • 152906-5

Volume


  • 111

Issue


  • 15

Place Of Publication


  • United States