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Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3

Journal Article


Abstract


  • Motivated by the occurrence of superconductivity transition in Cu-doped topological insulator Bi2Se3, we

    perform a combined study of low temperature scanning tunneling microscopy/spectroscopy and angle-resolved

    photoemission spectroscopy experiments and of ab initio density functional theory to clarify the doping nature

    of Cu atoms in Bi2Se3 films. By measuring the structural and electronic properties of the Cu-doped Bi2Se3 films

    at different doping temperatures, we find that Cu atoms behave as donors at intercalated and interstitial sites in

    Bi2Se3 films. Only the interstitial defect density plays an important role in the observation of Landau quantization

    of the topological surface states in Bi2Se3.

UOW Authors


  •   Wang, Yi-Lin (external author)
  •   Xu, Yong (external author)
  •   Jiang, Yeping (external author)
  •   Liu, Jun (external author)
  •   Chang, Cui-Zu (external author)
  •   Chen, Mu (external author)
  •   Li, Zhi
  •   Song, Canli (external author)
  •   Wang, Lili (external author)
  •   He, Ke (external author)
  •   Chen, Xi (external author)
  •   Duan, Wenhui (external author)
  •   Xue, Qi-Kun (external author)
  •   Ma, Xu-Cun (external author)

Publication Date


  • 2011

Geographic Focus


Citation


  • Wang, Y., Xu, Y., Jiang, Y., Liu, J., Chang, C., Chen, M., Li, Z., Song, C., Wang, L., He, K., Chen, X., Duan, W., Xue, Q. & Ma, X. (2011). Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3. Physical Review B: Condensed Matter and Materials Physics, 84 075335-1-075335-5.

Scopus Eid


  • 2-s2.0-80052512963

Start Page


  • 075335-1

End Page


  • 075335-5

Volume


  • 84

Place Of Publication


  • United States

Abstract


  • Motivated by the occurrence of superconductivity transition in Cu-doped topological insulator Bi2Se3, we

    perform a combined study of low temperature scanning tunneling microscopy/spectroscopy and angle-resolved

    photoemission spectroscopy experiments and of ab initio density functional theory to clarify the doping nature

    of Cu atoms in Bi2Se3 films. By measuring the structural and electronic properties of the Cu-doped Bi2Se3 films

    at different doping temperatures, we find that Cu atoms behave as donors at intercalated and interstitial sites in

    Bi2Se3 films. Only the interstitial defect density plays an important role in the observation of Landau quantization

    of the topological surface states in Bi2Se3.

UOW Authors


  •   Wang, Yi-Lin (external author)
  •   Xu, Yong (external author)
  •   Jiang, Yeping (external author)
  •   Liu, Jun (external author)
  •   Chang, Cui-Zu (external author)
  •   Chen, Mu (external author)
  •   Li, Zhi
  •   Song, Canli (external author)
  •   Wang, Lili (external author)
  •   He, Ke (external author)
  •   Chen, Xi (external author)
  •   Duan, Wenhui (external author)
  •   Xue, Qi-Kun (external author)
  •   Ma, Xu-Cun (external author)

Publication Date


  • 2011

Geographic Focus


Citation


  • Wang, Y., Xu, Y., Jiang, Y., Liu, J., Chang, C., Chen, M., Li, Z., Song, C., Wang, L., He, K., Chen, X., Duan, W., Xue, Q. & Ma, X. (2011). Structural defects and electronic properties of the Cu-doped topological insulator Bi2Se3. Physical Review B: Condensed Matter and Materials Physics, 84 075335-1-075335-5.

Scopus Eid


  • 2-s2.0-80052512963

Start Page


  • 075335-1

End Page


  • 075335-5

Volume


  • 84

Place Of Publication


  • United States