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Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3

Journal Article


Abstract


  • We report the experimental observation of Landau quantization of molecular beam epitaxy grown

    Sb2Te3 thin films by a low-temperature scanning tunneling microscope. Different from all the reported

    systems, the Landau quantization in a Sb2Te3 topological insulator is not sensitive to the intrinsic

    substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as

    a 2D massless Dirac fermion system is achieved. We demonstrate that four quintuple layers are the

    thickness limit for a Sb2Te3 thin film being a 3D topological insulator. The mechanism of the Landaulevel

    broadening is discussed in terms of enhanced quasiparticle lifetime.

Authors


  •   Jiang, Yeping (external author)
  •   Wang, Yi-Lin (external author)
  •   Chen, Mu (external author)
  •   Li, Zhi
  •   Song, Canli (external author)
  •   He, Ke (external author)
  •   Wang, Lili (external author)
  •   Chen, Xi (external author)
  •   Ma, Xu-Cun (external author)
  •   Xue, Qi-Kun (external author)

Publication Date


  • 2012

Geographic Focus


Citation


  • Jiang, Y., Wang, Y., Chen, M., Li, Z., Song, C., He, K., Wang, L., Chen, X., Ma, X. & Xue, Q. (2012). Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3. Physical Review Letters, 108 016401-1-016401-5.

Scopus Eid


  • 2-s2.0-84862776953

Start Page


  • 016401-1

End Page


  • 016401-5

Volume


  • 108

Place Of Publication


  • United States

Abstract


  • We report the experimental observation of Landau quantization of molecular beam epitaxy grown

    Sb2Te3 thin films by a low-temperature scanning tunneling microscope. Different from all the reported

    systems, the Landau quantization in a Sb2Te3 topological insulator is not sensitive to the intrinsic

    substitutional defects in the films. As a result, a nearly perfect linear energy dispersion of surface states as

    a 2D massless Dirac fermion system is achieved. We demonstrate that four quintuple layers are the

    thickness limit for a Sb2Te3 thin film being a 3D topological insulator. The mechanism of the Landaulevel

    broadening is discussed in terms of enhanced quasiparticle lifetime.

Authors


  •   Jiang, Yeping (external author)
  •   Wang, Yi-Lin (external author)
  •   Chen, Mu (external author)
  •   Li, Zhi
  •   Song, Canli (external author)
  •   He, Ke (external author)
  •   Wang, Lili (external author)
  •   Chen, Xi (external author)
  •   Ma, Xu-Cun (external author)
  •   Xue, Qi-Kun (external author)

Publication Date


  • 2012

Geographic Focus


Citation


  • Jiang, Y., Wang, Y., Chen, M., Li, Z., Song, C., He, K., Wang, L., Chen, X., Ma, X. & Xue, Q. (2012). Landau quantization and the thickness limit of topological insulator thin films of Sb2Te3. Physical Review Letters, 108 016401-1-016401-5.

Scopus Eid


  • 2-s2.0-84862776953

Start Page


  • 016401-1

End Page


  • 016401-5

Volume


  • 108

Place Of Publication


  • United States