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Fermi-Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping

Journal Article


Abstract


  • High-quality Sb2Te3 films are obtained by molecular beam epitaxy on a graphene substrate and

    investigated by in situ scanning tunneling microscopy and spectroscopy. Intrinsic defects responsible for

    the natural p-type conductivity of Sb2Te3 are identified to be the Sb vacancies and SbTe antisites in

    agreement with first-principles calculations. By minimizing defect densities, coupled with a transfer

    doping by the graphene substrate, the Fermi level of Sb2Te3 thin films can be tuned over the entire range

    of the bulk band gap. This establishes the necessary condition to explore topological insulator behaviors

    near the Dirac point.

Authors


  •   Jiang, Yeping (external author)
  •   Sun, Y Y. (external author)
  •   Chen, Mu (external author)
  •   Wang, Yi-Lin (external author)
  •   Li, Zhi
  •   Song, Canli (external author)
  •   He, Ke (external author)
  •   Wang, Lili (external author)
  •   Chen, Xi (external author)
  •   Xue, Qi-Kun (external author)
  •   Ma, Xu-Cun (external author)
  •   Zhang, S B. (external author)

Publication Date


  • 2012

Citation


  • Jiang, Y., Sun, Y. Y., Chen, M., Wang, Y., Li, Z., Song, C., He, K., Wang, L., Chen, X., Xue, Q., Ma, X. & Zhang, S. B. (2012). Fermi-Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping. Physical Review Letters, 108 066809-1-066809-5.

Scopus Eid


  • 2-s2.0-84863182454

Start Page


  • 066809-1

End Page


  • 066809-5

Volume


  • 108

Place Of Publication


  • United States

Abstract


  • High-quality Sb2Te3 films are obtained by molecular beam epitaxy on a graphene substrate and

    investigated by in situ scanning tunneling microscopy and spectroscopy. Intrinsic defects responsible for

    the natural p-type conductivity of Sb2Te3 are identified to be the Sb vacancies and SbTe antisites in

    agreement with first-principles calculations. By minimizing defect densities, coupled with a transfer

    doping by the graphene substrate, the Fermi level of Sb2Te3 thin films can be tuned over the entire range

    of the bulk band gap. This establishes the necessary condition to explore topological insulator behaviors

    near the Dirac point.

Authors


  •   Jiang, Yeping (external author)
  •   Sun, Y Y. (external author)
  •   Chen, Mu (external author)
  •   Wang, Yi-Lin (external author)
  •   Li, Zhi
  •   Song, Canli (external author)
  •   He, Ke (external author)
  •   Wang, Lili (external author)
  •   Chen, Xi (external author)
  •   Xue, Qi-Kun (external author)
  •   Ma, Xu-Cun (external author)
  •   Zhang, S B. (external author)

Publication Date


  • 2012

Citation


  • Jiang, Y., Sun, Y. Y., Chen, M., Wang, Y., Li, Z., Song, C., He, K., Wang, L., Chen, X., Xue, Q., Ma, X. & Zhang, S. B. (2012). Fermi-Level Tuning of Epitaxial Sb2Te3 Thin Films on Graphene by Regulating Intrinsic Defects and Substrate Transfer Doping. Physical Review Letters, 108 066809-1-066809-5.

Scopus Eid


  • 2-s2.0-84863182454

Start Page


  • 066809-1

End Page


  • 066809-5

Volume


  • 108

Place Of Publication


  • United States