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Gating the charge state of single Fe dopants in the topological insulator Bi 2 Se 3 with a scanning tunneling microscope

Journal Article


Abstract


  • Low-temperature scanning tunneling microscope (STM) is exploited to study directly the atomic and electronic

    structures of single Fe dopants in topological insulator Bi2Se3 thin films. Fe atoms predominantly and isovalently

    substitute for two distinct Bi sites at the subsurface with charge neutrality. In the vicinity of Fe substitutions,

    circular depressions in STM topography and sharp rings in spatially resolved conductance map, whose diameters

    apparently depend on the tunneling conditions, are observed. We show that the phenomena correlate well with

    the switching between Fe3+ and Fe2+ charge states due to the gate effect of the tunneling tip, as further evidenced

    by a multidopant system.

UOW Authors


  •   Song, Canli (external author)
  •   Jiang, Yeping (external author)
  •   Wang, Yi-Lin (external author)
  •   Li, Zhi
  •   Wang, Lili (external author)
  •   He, Ke (external author)
  •   Chen, Xi (external author)
  •   Ma, Xu-Cun (external author)
  •   Xue, Qi-Kun (external author)

Publication Date


  • 2012

Geographic Focus


Citation


  • Song, C., Jiang, Y., Wang, Y., Li, Z., Wang, L., He, K., Chen, X., Ma, X. & Xue, Q. (2012). Gating the charge state of single Fe dopants in the topological insulator Bi 2 Se 3 with a scanning tunneling microscope. Physical Review B: Condensed Matter and Materials Physics, 86 045441-1-045441-4.

Scopus Eid


  • 2-s2.0-84864599946

Start Page


  • 045441-1

End Page


  • 045441-4

Volume


  • 86

Place Of Publication


  • United States

Abstract


  • Low-temperature scanning tunneling microscope (STM) is exploited to study directly the atomic and electronic

    structures of single Fe dopants in topological insulator Bi2Se3 thin films. Fe atoms predominantly and isovalently

    substitute for two distinct Bi sites at the subsurface with charge neutrality. In the vicinity of Fe substitutions,

    circular depressions in STM topography and sharp rings in spatially resolved conductance map, whose diameters

    apparently depend on the tunneling conditions, are observed. We show that the phenomena correlate well with

    the switching between Fe3+ and Fe2+ charge states due to the gate effect of the tunneling tip, as further evidenced

    by a multidopant system.

UOW Authors


  •   Song, Canli (external author)
  •   Jiang, Yeping (external author)
  •   Wang, Yi-Lin (external author)
  •   Li, Zhi
  •   Wang, Lili (external author)
  •   He, Ke (external author)
  •   Chen, Xi (external author)
  •   Ma, Xu-Cun (external author)
  •   Xue, Qi-Kun (external author)

Publication Date


  • 2012

Geographic Focus


Citation


  • Song, C., Jiang, Y., Wang, Y., Li, Z., Wang, L., He, K., Chen, X., Ma, X. & Xue, Q. (2012). Gating the charge state of single Fe dopants in the topological insulator Bi 2 Se 3 with a scanning tunneling microscope. Physical Review B: Condensed Matter and Materials Physics, 86 045441-1-045441-4.

Scopus Eid


  • 2-s2.0-84864599946

Start Page


  • 045441-1

End Page


  • 045441-4

Volume


  • 86

Place Of Publication


  • United States