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Thermochemistry and growth mechanism of SiC nanowires

Journal Article


Abstract


  • The chemical reaction thermodynamics and a novel two-stage growth mechanism of SiC nanowires synthesized by carbothermal reduction reactions were investigated based on the Si-C-O systems over a wide temperature range (1050 ¿ T ¿ 2000 K). The carbothermal reduction reaction process involves the fast formation of gaseous SiO and CO crucial intermediates, and the further carbon reduction of SiO to SiC. The relationship between the free energy changes and temperature at different pressures was also discussed. Some fundamental data in the work can help to analyze the thermochemistry of the carbothermal reduction reaction in the Si-C-O system, which is beneficial to optimize the temperature, pressure and the input precursors for controlling the SiC nanowire growth.

Authors


  •   Chen, Jianjun (external author)
  •   Ding, Lijuan (external author)
  •   Xin, Lipeng (external author)
  •   Zeng, Fan (external author)
  •   Chen, Jun

Publication Date


  • 2017

Citation


  • Chen, J., Ding, L., Xin, L., Zeng, F. & Chen, J. (2017). Thermochemistry and growth mechanism of SiC nanowires. Journal of Solid State Chemistry, 253 282-286.

Scopus Eid


  • 2-s2.0-85020865930

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/2580

Number Of Pages


  • 4

Start Page


  • 282

End Page


  • 286

Volume


  • 253

Place Of Publication


  • United States

Abstract


  • The chemical reaction thermodynamics and a novel two-stage growth mechanism of SiC nanowires synthesized by carbothermal reduction reactions were investigated based on the Si-C-O systems over a wide temperature range (1050 ¿ T ¿ 2000 K). The carbothermal reduction reaction process involves the fast formation of gaseous SiO and CO crucial intermediates, and the further carbon reduction of SiO to SiC. The relationship between the free energy changes and temperature at different pressures was also discussed. Some fundamental data in the work can help to analyze the thermochemistry of the carbothermal reduction reaction in the Si-C-O system, which is beneficial to optimize the temperature, pressure and the input precursors for controlling the SiC nanowire growth.

Authors


  •   Chen, Jianjun (external author)
  •   Ding, Lijuan (external author)
  •   Xin, Lipeng (external author)
  •   Zeng, Fan (external author)
  •   Chen, Jun

Publication Date


  • 2017

Citation


  • Chen, J., Ding, L., Xin, L., Zeng, F. & Chen, J. (2017). Thermochemistry and growth mechanism of SiC nanowires. Journal of Solid State Chemistry, 253 282-286.

Scopus Eid


  • 2-s2.0-85020865930

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/2580

Number Of Pages


  • 4

Start Page


  • 282

End Page


  • 286

Volume


  • 253

Place Of Publication


  • United States