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Enhancing the field emission properties of Se-doped GaN nanowires

Journal Article


Abstract


  • Pure and Se-doped GaN nanowires (NWs) are synthesized on Pt-coated Si(111) substrates via

    chemical vapor deposition. The GaN NWs exhibit a uniform density with an average diameter of

    20–120 nm. The structure of the NWs is wurtzite hexagonal, and the growth direction is along

    [0001]. Field emission measurements show that the Se-doped GaN NWs possess a low turn-on

    field (2.9 V μm−1

    ) compared with the pure GaN NWs (7.0 V μm−1

    ). In addition, density

    functional theory calculations indicate that the donor states near the Fermi level are mainly

    formed through the hybridization between Se 4p and N 2p orbitals and that the Fermi level move

    towards the vacuum level. Consequently, the work functions of Se-doped GaN NWs are lower

    than those of pure GaN NWs.

Authors


  •   Li, Enling (external author)
  •   Wu, Guishuang (external author)
  •   Cui, Zhenduo (external author)
  •   Ma, Deming (external author)
  •   Shi, Wei (external author)
  •   Wang, Xiaolin

Publication Date


  • 2016

Citation


  • Li, E., Wu, G., Cui, Z., Ma, D., Shi, W. & Wang, X. (2016). Enhancing the field emission properties of Se-doped GaN nanowires. Nanotechnology, 27 265707-1-265707-8.

Scopus Eid


  • 2-s2.0-84976351160

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/2542

Has Global Citation Frequency


Start Page


  • 265707-1

End Page


  • 265707-8

Volume


  • 27

Place Of Publication


  • United Kingdom

Abstract


  • Pure and Se-doped GaN nanowires (NWs) are synthesized on Pt-coated Si(111) substrates via

    chemical vapor deposition. The GaN NWs exhibit a uniform density with an average diameter of

    20–120 nm. The structure of the NWs is wurtzite hexagonal, and the growth direction is along

    [0001]. Field emission measurements show that the Se-doped GaN NWs possess a low turn-on

    field (2.9 V μm−1

    ) compared with the pure GaN NWs (7.0 V μm−1

    ). In addition, density

    functional theory calculations indicate that the donor states near the Fermi level are mainly

    formed through the hybridization between Se 4p and N 2p orbitals and that the Fermi level move

    towards the vacuum level. Consequently, the work functions of Se-doped GaN NWs are lower

    than those of pure GaN NWs.

Authors


  •   Li, Enling (external author)
  •   Wu, Guishuang (external author)
  •   Cui, Zhenduo (external author)
  •   Ma, Deming (external author)
  •   Shi, Wei (external author)
  •   Wang, Xiaolin

Publication Date


  • 2016

Citation


  • Li, E., Wu, G., Cui, Z., Ma, D., Shi, W. & Wang, X. (2016). Enhancing the field emission properties of Se-doped GaN nanowires. Nanotechnology, 27 265707-1-265707-8.

Scopus Eid


  • 2-s2.0-84976351160

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/2542

Has Global Citation Frequency


Start Page


  • 265707-1

End Page


  • 265707-8

Volume


  • 27

Place Of Publication


  • United Kingdom