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Enhancing s, p–d exchange interactions at room temperature by carrier doping in single crystalline Co0.4Zn0.6O epitaxial films

Journal Article


Abstract


  • Magnetic doping of semiconductors has been actively pursued because of their potential applications

    in the spintronic devices. Central to these efforts is a drive to control the mutual interactions between

    their magnetic properties (supported by d electrons of the magnetic ions) and their semiconductor

    properties (supported by s and/or p electrons) at room temperature (RT). Despite the long, intensive

    efforts, the experimental evidence of thermally robust s, p–d coupling in a semiconductor remains

    scarce and controversial. Here, we report the enhancement of RT ferromagnetic s, p–d exchange

    interaction by means of carrier doping in single crystalline Co0.4Zn0.6O epitaxial films with a high

    Co concentration. Magneto-transport measurements reveal that spin-polarized conducting carriers

    are produced at RT and are increased with the carrier density through Ga3þ doping, owing to the

    s, p–d coupling between Ga (4s), O (2p), and Co (3d) orbitals. With the ability to individually

    control carrier density and magnetic doping, single crystalline Ga(Co, Zn)O films can lay a solid

    foundation for the development of practical semiconductor spintronic devices operable at RT

Authors


  •   Cao, Qiang (external author)
  •   Fu, Maoxiang (external author)
  •   Zhu, Dapeng (external author)
  •   Cai, Li (external author)
  •   Zhang, Kun (external author)
  •   Liu, Guo-Lei (external author)
  •   Chen, Yan-Xue (external author)
  •   Kang, Shi-Shou (external author)
  •   Yan, Shi-Shen (external author)
  •   Mei, Liang-Mo (external author)
  •   Wang, Xiaolin

Publication Date


  • 2017

Citation


  • Cao, Q., Fu, M., Zhu, D., Cai, L., Zhang, K., Liu, G., Chen, Y., Kang, S., Yan, S., Mei, L. & Wang, X. (2017). Enhancing s, p–d exchange interactions at room temperature by carrier doping in single crystalline Co0.4Zn0.6O epitaxial films. Applied Physics Letters, 110 092402-1-092402-4.

Scopus Eid


  • 2-s2.0-85014520336

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/2415

Start Page


  • 092402-1

End Page


  • 092402-4

Volume


  • 110

Place Of Publication


  • United States

Abstract


  • Magnetic doping of semiconductors has been actively pursued because of their potential applications

    in the spintronic devices. Central to these efforts is a drive to control the mutual interactions between

    their magnetic properties (supported by d electrons of the magnetic ions) and their semiconductor

    properties (supported by s and/or p electrons) at room temperature (RT). Despite the long, intensive

    efforts, the experimental evidence of thermally robust s, p–d coupling in a semiconductor remains

    scarce and controversial. Here, we report the enhancement of RT ferromagnetic s, p–d exchange

    interaction by means of carrier doping in single crystalline Co0.4Zn0.6O epitaxial films with a high

    Co concentration. Magneto-transport measurements reveal that spin-polarized conducting carriers

    are produced at RT and are increased with the carrier density through Ga3þ doping, owing to the

    s, p–d coupling between Ga (4s), O (2p), and Co (3d) orbitals. With the ability to individually

    control carrier density and magnetic doping, single crystalline Ga(Co, Zn)O films can lay a solid

    foundation for the development of practical semiconductor spintronic devices operable at RT

Authors


  •   Cao, Qiang (external author)
  •   Fu, Maoxiang (external author)
  •   Zhu, Dapeng (external author)
  •   Cai, Li (external author)
  •   Zhang, Kun (external author)
  •   Liu, Guo-Lei (external author)
  •   Chen, Yan-Xue (external author)
  •   Kang, Shi-Shou (external author)
  •   Yan, Shi-Shen (external author)
  •   Mei, Liang-Mo (external author)
  •   Wang, Xiaolin

Publication Date


  • 2017

Citation


  • Cao, Q., Fu, M., Zhu, D., Cai, L., Zhang, K., Liu, G., Chen, Y., Kang, S., Yan, S., Mei, L. & Wang, X. (2017). Enhancing s, p–d exchange interactions at room temperature by carrier doping in single crystalline Co0.4Zn0.6O epitaxial films. Applied Physics Letters, 110 092402-1-092402-4.

Scopus Eid


  • 2-s2.0-85014520336

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/2415

Start Page


  • 092402-1

End Page


  • 092402-4

Volume


  • 110

Place Of Publication


  • United States