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Polarized Raman backscattering selection rules for (hhl)-oriented diamond- and zincblende-type crystals

Journal Article


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Abstract


  • Due to their interesting orientation-dependent properties, the ability to grow high-index semiconductor crystals and nanostructures extends the design palette for applications based on these materials. Notably, a source containing a systematic reporting of what the Raman tensors are for an arbitrary high-index zincblende material is yet to appear in the literature. Herein, we present the polarized Raman backscattering selection rules for arbitrary (hhl)-oriented diamond- and zincblende-type crystal surfaces and verify their correctness through experiment (up to (115)). Considering the many degrees of freedom available to common polarized micro-Raman scattering instruments, and the unique local orientation of the probed material, we further examine a range of consequences imposed by the selection rules for the Raman backscattering method.

Authors


  •   Steele, Julian (external author)
  •   Puech, P (external author)
  •   Lewis, R A.

Publication Date


  • 2016

Citation


  • Steele, J. A., Puech, P. & Lewis, R. A. (2016). Polarized Raman backscattering selection rules for (hhl)-oriented diamond- and zincblende-type crystals. Journal of Applied Physics, 120 (5), 055701-1-055701-6.

Scopus Eid


  • 2-s2.0-84980315544

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=3241&context=aiimpapers

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/2220

Start Page


  • 055701-1

End Page


  • 055701-6

Volume


  • 120

Issue


  • 5

Abstract


  • Due to their interesting orientation-dependent properties, the ability to grow high-index semiconductor crystals and nanostructures extends the design palette for applications based on these materials. Notably, a source containing a systematic reporting of what the Raman tensors are for an arbitrary high-index zincblende material is yet to appear in the literature. Herein, we present the polarized Raman backscattering selection rules for arbitrary (hhl)-oriented diamond- and zincblende-type crystal surfaces and verify their correctness through experiment (up to (115)). Considering the many degrees of freedom available to common polarized micro-Raman scattering instruments, and the unique local orientation of the probed material, we further examine a range of consequences imposed by the selection rules for the Raman backscattering method.

Authors


  •   Steele, Julian (external author)
  •   Puech, P (external author)
  •   Lewis, R A.

Publication Date


  • 2016

Citation


  • Steele, J. A., Puech, P. & Lewis, R. A. (2016). Polarized Raman backscattering selection rules for (hhl)-oriented diamond- and zincblende-type crystals. Journal of Applied Physics, 120 (5), 055701-1-055701-6.

Scopus Eid


  • 2-s2.0-84980315544

Ro Full-text Url


  • http://ro.uow.edu.au/cgi/viewcontent.cgi?article=3241&context=aiimpapers

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/2220

Start Page


  • 055701-1

End Page


  • 055701-6

Volume


  • 120

Issue


  • 5