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Mechanical and electrical switching of local ferroelectric domains of K0.5Bi4.5Ti4O15 film

Journal Article


Abstract


  • Ferroelectric/Piezoelectric K0.5Bi4.5Ti4O15 (KBT) film was fabricated by pulsed laser deposition method and confirmed by ferroelectric, dielectric measurements and local butterfly-type piezoresponse hysteresis loops. Importantly, ferroelectric domain switching by both electrical field and mechanical force in KBT film was demonstrated. The dark and bright contrast represents the PFM response of the up and down polarized domains, which can be written by a dc bias of ±12 V or a mechanical force of 40–50 nN. The successful demonstration of mechanical force switching of ferroelectric domain in KBT film other than electric field provides a novel mean for information storage and sensors.

UOW Authors


  •   Zhao, Hongyang (external author)
  •   Cai, Kang (external author)
  •   Cheng, Zhenxiang
  •   Ma, Zhibin (external author)
  •   Kimura, Hideo (external author)
  •   Jia, Tingting (external author)

Publication Date


  • 2016

Citation


  • Zhao, H., Cai, K., Cheng, Z., Ma, Z., Kimura, H. & Jia, T. (2016). Mechanical and electrical switching of local ferroelectric domains of K0.5Bi4.5Ti4O15 film. Journal of Materials Science: Materials in Electronics, 27 (6), 5613-5617.

Scopus Eid


  • 2-s2.0-84964940034

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/2050

Has Global Citation Frequency


Number Of Pages


  • 4

Start Page


  • 5613

End Page


  • 5617

Volume


  • 27

Issue


  • 6

Place Of Publication


  • United States

Abstract


  • Ferroelectric/Piezoelectric K0.5Bi4.5Ti4O15 (KBT) film was fabricated by pulsed laser deposition method and confirmed by ferroelectric, dielectric measurements and local butterfly-type piezoresponse hysteresis loops. Importantly, ferroelectric domain switching by both electrical field and mechanical force in KBT film was demonstrated. The dark and bright contrast represents the PFM response of the up and down polarized domains, which can be written by a dc bias of ±12 V or a mechanical force of 40–50 nN. The successful demonstration of mechanical force switching of ferroelectric domain in KBT film other than electric field provides a novel mean for information storage and sensors.

UOW Authors


  •   Zhao, Hongyang (external author)
  •   Cai, Kang (external author)
  •   Cheng, Zhenxiang
  •   Ma, Zhibin (external author)
  •   Kimura, Hideo (external author)
  •   Jia, Tingting (external author)

Publication Date


  • 2016

Citation


  • Zhao, H., Cai, K., Cheng, Z., Ma, Z., Kimura, H. & Jia, T. (2016). Mechanical and electrical switching of local ferroelectric domains of K0.5Bi4.5Ti4O15 film. Journal of Materials Science: Materials in Electronics, 27 (6), 5613-5617.

Scopus Eid


  • 2-s2.0-84964940034

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/2050

Has Global Citation Frequency


Number Of Pages


  • 4

Start Page


  • 5613

End Page


  • 5617

Volume


  • 27

Issue


  • 6

Place Of Publication


  • United States