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Si-doped Fe2O3 nanotubular/nanoporous layers for enhanced photoelectrochemical water splitting

Journal Article


Abstract


  • The present work reports the enhancement of the photoelectrochemical water splitting performance of in-situ silicon (Si)-doped nanotubular/nanoporous (NT/NP) layers. These layers were grown by self-organizing anodizationon Fe-Si alloys of various Sicontent. The incorporation of Si is found to retard the layer growth rates, leadsto a more pronounced nanotubular morphology, and most importantly, an improved photoelectrochemical behavior. By increasing Si content from1, 2 to 5 at.% in the iron oxide NT/NP photoanodes, the photocurrent onset potential shifts favorably to lower values. At 1.3 V vs. RHE, hematite layer with 5 at.% Si shows a 5-fold increase of the photocurrent, i.e. 0.5 mA cm -2 in comparison to 0.1 mA cm-2 for the undoped samples. The study also reveals that a suitable layer thickness is essential to achieve a beneficial effect of the Si doping. © 2013 Elsevier B.V. All rights reserved.

UOW Authors


  •   Lee, Chong Yong
  •   Wang, Lei (external author)
  •   Kado, Yuya (external author)
  •   Kirchgeorg, Robin (external author)
  •   Schmuki, Patrik (external author)

Publication Date


  • 2013

Citation


  • Lee, C., Wang, L., Kado, Y., Kirchgeorg, R. & Schmuki, P. (2013). Si-doped Fe2O3 nanotubular/nanoporous layers for enhanced photoelectrochemical water splitting. Electrochemistry Communications, 34 308-311.

Scopus Eid


  • 2-s2.0-84880998355

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/1673

Has Global Citation Frequency


Number Of Pages


  • 3

Start Page


  • 308

End Page


  • 311

Volume


  • 34

Place Of Publication


  • United States

Abstract


  • The present work reports the enhancement of the photoelectrochemical water splitting performance of in-situ silicon (Si)-doped nanotubular/nanoporous (NT/NP) layers. These layers were grown by self-organizing anodizationon Fe-Si alloys of various Sicontent. The incorporation of Si is found to retard the layer growth rates, leadsto a more pronounced nanotubular morphology, and most importantly, an improved photoelectrochemical behavior. By increasing Si content from1, 2 to 5 at.% in the iron oxide NT/NP photoanodes, the photocurrent onset potential shifts favorably to lower values. At 1.3 V vs. RHE, hematite layer with 5 at.% Si shows a 5-fold increase of the photocurrent, i.e. 0.5 mA cm -2 in comparison to 0.1 mA cm-2 for the undoped samples. The study also reveals that a suitable layer thickness is essential to achieve a beneficial effect of the Si doping. © 2013 Elsevier B.V. All rights reserved.

UOW Authors


  •   Lee, Chong Yong
  •   Wang, Lei (external author)
  •   Kado, Yuya (external author)
  •   Kirchgeorg, Robin (external author)
  •   Schmuki, Patrik (external author)

Publication Date


  • 2013

Citation


  • Lee, C., Wang, L., Kado, Y., Kirchgeorg, R. & Schmuki, P. (2013). Si-doped Fe2O3 nanotubular/nanoporous layers for enhanced photoelectrochemical water splitting. Electrochemistry Communications, 34 308-311.

Scopus Eid


  • 2-s2.0-84880998355

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/1673

Has Global Citation Frequency


Number Of Pages


  • 3

Start Page


  • 308

End Page


  • 311

Volume


  • 34

Place Of Publication


  • United States