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Comparison of flux pinning in Si- and SiCl4- doped MgB2 superconductors: evidence for coexistence of different pinning mechanisms

Journal Article


Abstract


  • The transport and magnetic properties of 5 wt% nano-Si- and 10 wt% SiCl4-doped MgB2 have

    been studied by measuring the resistivity, ρ, critical current density, Jc, irreversibility field, Hirr,

    and upper critical field, Hc2. Similar scattering mechanisms have been found for both dopants,

    which are supported by the results for the critical temperature and the upper critical field. The

    critical current density and the irreversibility field results indicate that there are different pinning

    mechanisms for nano-Si- and SiCl4-doped MgB2. Pinning mechanisms are studied in terms of

    the different pinning models. It was found that a variety of pinning mechanisms, e.g. normal

    point pinning, normal surface pinning, and normal volume pinning mechanisms coexist in both

    types of doped MgB2. The results show that the contributions of the pinning mechanisms are

    dependent on the temperature and magnetic field.

UOW Authors


  •   Ghorbani, Shaban (external author)
  •   Hosseinzadeh, M (external author)
  •   Wang, Xiaolin

Publication Date


  • 2015

Citation


  • Ghorbani, S. R., Hosseinzadeh, M. & Wang, X. L. (2015). Comparison of flux pinning in Si- and SiCl4- doped MgB2 superconductors: evidence for coexistence of different pinning mechanisms. Superconductor Science and Technology, 28 (12), 125006-1-125006-6.

Scopus Eid


  • 2-s2.0-84946594634

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/1638

Has Global Citation Frequency


Start Page


  • 125006-1

End Page


  • 125006-6

Volume


  • 28

Issue


  • 12

Place Of Publication


  • United Kingdom

Abstract


  • The transport and magnetic properties of 5 wt% nano-Si- and 10 wt% SiCl4-doped MgB2 have

    been studied by measuring the resistivity, ρ, critical current density, Jc, irreversibility field, Hirr,

    and upper critical field, Hc2. Similar scattering mechanisms have been found for both dopants,

    which are supported by the results for the critical temperature and the upper critical field. The

    critical current density and the irreversibility field results indicate that there are different pinning

    mechanisms for nano-Si- and SiCl4-doped MgB2. Pinning mechanisms are studied in terms of

    the different pinning models. It was found that a variety of pinning mechanisms, e.g. normal

    point pinning, normal surface pinning, and normal volume pinning mechanisms coexist in both

    types of doped MgB2. The results show that the contributions of the pinning mechanisms are

    dependent on the temperature and magnetic field.

UOW Authors


  •   Ghorbani, Shaban (external author)
  •   Hosseinzadeh, M (external author)
  •   Wang, Xiaolin

Publication Date


  • 2015

Citation


  • Ghorbani, S. R., Hosseinzadeh, M. & Wang, X. L. (2015). Comparison of flux pinning in Si- and SiCl4- doped MgB2 superconductors: evidence for coexistence of different pinning mechanisms. Superconductor Science and Technology, 28 (12), 125006-1-125006-6.

Scopus Eid


  • 2-s2.0-84946594634

Ro Metadata Url


  • http://ro.uow.edu.au/aiimpapers/1638

Has Global Citation Frequency


Start Page


  • 125006-1

End Page


  • 125006-6

Volume


  • 28

Issue


  • 12

Place Of Publication


  • United Kingdom