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Effect of gas atmosphere on the formation of silicon by reaction of SiC and SiO2

Journal Article


Abstract


  • The formation of silicon by reaction between quartz and SiC has been studied in the temperature range of 1600–1900 °C in argon and hydrogen atmospheres. The reaction process was monitored by an infrared gas analyzer, and the reaction products were characterized by LECO, XRD, and SEM. Quartz–SiC reactions with SiO2/SiC molar ratio of 1:1 and 1:2 were studied in a fixed bed reactor in a graphite furnace. The production of silicon from quartz and SiC was strongly affected by temperature, SiO2/SiC molar ratio, and gas atmosphere. The yield of silicon in the reaction at 1900 °C in argon from samples with SiO2/SiC molar ratios of 1:1 and 1:2 reached 32.7 and 44.5 %, respectively. SiO2–SiC reaction at 1900 °C in hydrogen with the SiO2/SiC molar ratio of 1:2 resulted in the silicon yield of 66.7 %. Higher silicon yield in hydrogen was attributed for the involvement of hydrogen in the direct reduction of silica to SiO.

Publication Date


  • 2016

Citation


  • Li, X., Zhang, G., Ostrovski, O. & Tronstad, R. (2016). Effect of gas atmosphere on the formation of silicon by reaction of SiC and SiO2. Journal of Materials Science, 51 (2), 876-884.

Scopus Eid


  • 2-s2.0-84947491767

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/4620

Number Of Pages


  • 8

Start Page


  • 876

End Page


  • 884

Volume


  • 51

Issue


  • 2

Abstract


  • The formation of silicon by reaction between quartz and SiC has been studied in the temperature range of 1600–1900 °C in argon and hydrogen atmospheres. The reaction process was monitored by an infrared gas analyzer, and the reaction products were characterized by LECO, XRD, and SEM. Quartz–SiC reactions with SiO2/SiC molar ratio of 1:1 and 1:2 were studied in a fixed bed reactor in a graphite furnace. The production of silicon from quartz and SiC was strongly affected by temperature, SiO2/SiC molar ratio, and gas atmosphere. The yield of silicon in the reaction at 1900 °C in argon from samples with SiO2/SiC molar ratios of 1:1 and 1:2 reached 32.7 and 44.5 %, respectively. SiO2–SiC reaction at 1900 °C in hydrogen with the SiO2/SiC molar ratio of 1:2 resulted in the silicon yield of 66.7 %. Higher silicon yield in hydrogen was attributed for the involvement of hydrogen in the direct reduction of silica to SiO.

Publication Date


  • 2016

Citation


  • Li, X., Zhang, G., Ostrovski, O. & Tronstad, R. (2016). Effect of gas atmosphere on the formation of silicon by reaction of SiC and SiO2. Journal of Materials Science, 51 (2), 876-884.

Scopus Eid


  • 2-s2.0-84947491767

Ro Metadata Url


  • http://ro.uow.edu.au/eispapers/4620

Number Of Pages


  • 8

Start Page


  • 876

End Page


  • 884

Volume


  • 51

Issue


  • 2